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 MAC223A6FP MAC223A8FP , , MAC223A10FP
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as lighting systems, heater controls, motor controls and power supplies; or wherever full-wave silicon-gate-controlled devices are needed. * Off-State Voltages to 800 Volts * All Diffused and Glass Passivated Junctions for Parameter Uniformity and Stability * Small, Rugged Thermowatt Construction for Thermal Resistance and High Heat Dissipation * Gate Triggering Guaranteed in Four Modes * Indicates UL Registered -- File #E69369 * Device Marking: Logo, Device Type, e.g., MAC223A6FP, Date Code
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Peak Repetitive Off-State Voltage(1) (TJ = -40 to +125C, Sine Wave 50 to 60 Hz, Gate Open) MAC223A6FP MAC223A8FP MAC223A10FP On-State RMS Current (TC = +80C)(2) Full Cycle Sine Wave 50 to 60 Hz Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = 80C) Preceded and followed by rated current Circuit Fusing (t = 8.3 ms) Peak Gate Power (t 2 sec; TC = +80C) Symbol VDRM, VRRM 400 600 800 IT(RMS) ITSM 25 250 Amps Amps 1 2 3 Value Unit Volts
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ISOLATED TRIAC ( 25 AMPERES RMS 400 thru 800 VOLTS
)
MT2 G
MT1
I2t PGM PG(AV) IGM VGM V(ISO) TJ Tstg --
260 20 0.5 2.0
A2s Watts Watt 1 Amps Volts Volts C C in. lb. 2 3
p p p
ISOLATED TO-220 Full Pack CASE 221C STYLE 3
Average Gate Power (t = 8.3 ms; TC = +80C) Peak Gate Current (t 2 sec; TC = +80C) Peak Gate Voltage (t 2 sec; TC = +80C) RMS Isolation Voltage (TA = 25C, Relative Humidity 20%) ( )
PIN ASSIGNMENT
Main Terminal 1 Main Terminal 2 Gate
"10
1500 -40 to +125 -40 to +150 8.0
p
ORDERING INFORMATION
Device MAC223A6FP MAC223A8FP MAC223A10FP Package ISOLATED TO220FP ISOLATED TO220FP ISOLATED TO220FP Shipping 500/Box 500/Box 500/Box
Operating Junction Temperature Storage Temperature Range Mounting Torque
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (2) The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.
Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 1999
1
February, 2000 - Rev. 1
Publication Order Number: MAC223A6FP/D
MAC223A6FP, MAC223A8FP, MAC223A10FP
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RJC RCS RJA TL Max 1.2 2.2 60 260 Unit C/W C/W C/W C
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25C TJ = 125C IDRM, IRRM -- -- -- -- 10 2.0 A mA
ON CHARACTERISTICS
Peak On-State Voltage (ITM = A Peak, Pulse Width
"35
p 2 ms; Duty Cycle p 2%)
VTM IGT
--
1.4
1.85
Volts mA
Gate Trigger Current (Continuous dc) (V D = 12 V, R L = 100 ) MT2(+), G(+); MT2(-), G(-); MT2(+), G(-) MT2(-), G(+) Gate Trigger Voltage (Continuous dc) (V D = 12 V, R L = 100 ) MT2(+), G(+); MT2(-), G(-); MT2(+), G(-) MT2(-), G(+) Gate Non-trigger Voltage (VD = 12 V, TJ = 125C, RL = 100 ) All Quadrants Holding Current (VD = 12 Vdc, Gate Open, Initiating Current =
-- -- VGT -- -- VGD 0.2
20 30
50 75 Volts
1.1 1.3 0.4 10 1.5
2.0 2.5 Volts -- 50 -- mA s
"200 mA)
IH t gt
-- --
Gate Controlled Turn-On Time (VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, TC = 125C) Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 35 A Peak, Commutating di/dt = 12.6 A/ms, Gate Unenergized, TC = 80C) dv/dt dv/dt(c) -- -- 40 5.0 -- -- V/s V/s
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2
MAC223A6FP, MAC223A8FP, MAC223A10FP
Voltage Current Characteristic of Triacs (Bidirectional Device)
+ Current Quadrant 1 MainTerminal 2 +
Symbol
VDRM IDRM VRRM IRRM VTM IH
Parameter
Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current IH Quadrant 3 VTM MainTerminal 2 - IRRM at VRRM on state
VTM IH
off state
+ Voltage IDRM at VDRM
Quadrant Definitions for a Triac
MT2 POSITIVE (Positive Half Cycle) +
(+) MT2
(+) MT2
Quadrant II
(-) IGT GATE MT1 REF
(+) IGT GATE MT1 REF
Quadrant I
IGT - (-) MT2 (-) MT2
+ IGT
Quadrant III
(-) IGT GATE MT1 REF
(+) IGT GATE MT1 REF
Quadrant IV
- MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants I and III are used.
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3
MAC223A6FP, MAC223A8FP, MAC223A10FP
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) PD(AV) , AVERAGE POWER DISSIPATION (WATTS) 125 115 105 95 85 75 40
30
20
10
0 0 5 10 15 20 25 IT(RMS), RMS ON-STATE CURRENT (AMPS)
0
5
10
15
20
25
IT(RMS), RMS ON-STATE CURRENT (AMPS)
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
NORMALIZED GATE CURRENT
NORMALIZED GATE VOLTAGE
3 2 1 0.5 0.3 0.2 0.1 -60
VD = 12 V RL = 100 W
3 2 1 0.5 0.3 0.2 0.1 -60
VD = 12 V RL = 100 W
-40
-20
0
20
40
60
80
100
120
140
-40
-20
0
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 3. Typical Gate Trigger Current
Figure 4. Typical Gate Trigger Voltage
i TM , INSTANTANEOUS ON-STATE CURRENT (AMPS)
NORMALIZED HOLD CURRENT
200 100 50 TJ = 25C 10 5 1 0.5 0.1 0 1 2 3 4 vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
2 1 0.5 0.3 0.2 0.1 -60
ITM = 200 mA GATE OPEN
-40
-20
0
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (C)
Figure 5. Typical Hold Current
Figure 6. Typical On-State Characteristics
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4
MAC223A6FP, MAC223A8FP, MAC223A10FP
PACKAGE DIMENSIONS
ISOLATED TO-220 Full Pack CASE 221C-02 ISSUE C
-B- P
-T- F N E C S
SEATING PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION Z. DIM A B C D E F G H J K L N P Q R S Z INCHES MIN MAX 0.680 0.700 0.388 0.408 0.175 0.195 0.025 0.040 0.340 0.355 0.140 0.150 0.100 BSC 0.110 0.155 0.018 0.028 0.500 0.550 0.045 0.070 0.049 --- 0.270 0.290 0.480 0.500 0.090 0.120 0.105 0.115 0.070 0.090 MILLIMETERS MIN MAX 17.28 17.78 9.86 10.36 4.45 4.95 0.64 1.01 8.64 9.01 3.56 3.81 2.54 BSC 2.80 3.93 0.46 0.71 12.70 13.97 1.15 1.77 1.25 --- 6.86 7.36 12.20 12.70 2.29 3.04 2.67 2.92 1.78 2.28
H -Y-
Q
123
A
K Z L G D
3 PL
J R
0.25 (0.010)
M
B
M
Y
STYLE 3: PIN 1. MT 1 2. MT 2 3. GATE
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5
MAC223A6FP, MAC223A8FP, MAC223A10FP
Notes
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6
MAC223A6FP, MAC223A8FP, MAC223A10FP
Notes
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7
MAC223A6FP, MAC223A8FP, MAC223A10FP
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (M-F 1:00pm to 5:00pm Munich Time) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (M-F 1:00pm to 5:00pm Toulouse Time) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (M-F 12:00pm to 5:00pm UK Time) Email: ONlit@hibbertco.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, England, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-8549 Phone: 81-3-5740-2745 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local Sales Representative.
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8
MAC223A6FP/D


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